EPIR manufactures high-performance infrared products based on single-crystal II-VI semiconductor materials. Using customized molecular beam epitaxy (MBE) technology, EPIR grows state of the art mercury cadmium telluride (HgCdTe) material for infrared detectors. This material includes multiple epitaxial layers grown on either lattice matched cadmium zinc telluride (CdZnTe) for high performance applications or silicon (Si) substrates for a low-cost approach. These growths are done with high purity, few precipitates and low defect densities. They are highly uniform, grown on large areas and exhibit state of the art performance.
Standard Products
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HgCdTe/CdZnTe
2cm x 2cm up to 5cm x 5 cm wafers -
HgCdTe/CdTe/Si
3" and 4" diameter wafers -
CdTe/Si
3", 4" and 6" diameter wafers -
Specialized Materials
EPIR develops specialized products to meet our customer's needs
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Wavelength Ranges
Single Color
- eSWIR 1.0 µm - 2.7 µm
- MWIR 3.0 µm - 5.5 µm
- LWIR 8.0 µm - 13.0 µm
- VLWIR >13.0 µm
Multicolor
- MWIR/LWIR
- SWIR/MWIR
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Wafer Specifications
- DCRC < 60 arcsec
- Thickness Variation (3" wafer): +/- 1.5%
- % Cd Variation (3" wafer): < 1%
- N-type Doping: 5 x 1014 - 1 x 1018 / cm3
- P-type Doping: 1 x 1015 - 5 x 1016 / cm3