EPIR manufactures high-performance infrared products based on single-crystal II-VI semiconductor materials. Using customized molecular beam epitaxy (MBE) technology, EPIR grows state of the art mercury cadmium telluride (HgCdTe) material for infrared detectors. This material includes multiple epitaxial layers grown on either lattice matched cadmium zinc telluride (CdZnTe) for high performance applications or silicon (Si) substrates for a low-cost approach. These growths are done with high purity, few precipitates and low defect densities. They are highly uniform, grown on large areas and exhibit state of the art performance.